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power transistors www.jmnic.com 2SA1012 silicon pnp t ransistors features b c e ?q with t o -220 package ?q complementary to 2sc2562 absolute maximum ratings t c =25 s y m b o l p a ra m e t e r ra t i n g u n i t v cb o collector to base voltage -60 v v ce o collector to emitter voltage -50 v v e b o emitter to base voltage -5 v i b base current a i c collector current -5 a p c collector pow er dissipation 25 w t j junction temperature 150 t stg storage temperature -55~ 150 t o - 2 2 0 electrical characteristics t c =25 s y m b o l p a ra m e t e r c o n d i t i o n s m i n ty p ma x u n i t i cb o collector-base cut-of f current v cb = - 50v ; i e =0 - 1 u a i ebo emitter-base cut-of f current v eb =-5 v ; i c =0 - 1 u a i ce o collector-emitter cut-of f current v cb o collector-base breakdow n voltage v (br)ceo collector-emitter breakdow n voltage i c = - 10ma;i b = 0 - 5 0 v v ebo emitter-base breakdow n voltage v ce (sa t -1 ) collector-emitter saturation voltages i c =-8 a ; i b = - 0 . 1 5 a - 0 . 2 - 0 . 4 v v ce (sa t -2 ) collector-emitter saturation voltages h f e - 1 f o rw ard current transfer ratio i c =-1 a ; v ce = - 1 v 7 0 2 4 0 h f e - 2 f o rw ard current transfer ratio i c =-3 a ; v ce = - 1 v 3 0 v be( sat) 1 base-emitter saturation voltages i c =-8 a ; i b = - 0 . 1 5 a - 0 . 9 - 1 . 2 v v be( sat) 2 base-emitter saturation voltages c ob collector output capacitance v cb = - 10v ; i e = 0 ;f= 1 m h z 7 0 pf f t t r ansition frepuency i c =-1 a ; v ce = - 4 v 6 0 m h z

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